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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Common Flash Interface
Table 19: CFI Query System Interface Information
Note 1 applies to the entire table
Address
x16
1Bh
x8
36h
Data
0027h
Description
V CC logic supply minimum program/erase voltage
Value
2.7V
Bits[7:4] BCD value in volts
Bits[3:0] BCD value in 100mV
1Ch
38h
0036h
V CC logic supply maximum program/erase voltage
3.6V
Bits[7:4] BCD value in volts
Bits[3:0] BCD value in 100mV
1Dh
3Ah
00B5h
V PPH (programming) supply minimum program/erase voltage
11.5V
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 100mV
1Eh
3Ch
00C5h
V PPH (programming) supply maximum program/erase voltage
12.5V
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 10mV
1Fh
3Eh
0009h
Typical timeout for single byte/word program = 2 n μ s
512μs
20h
21h
40h
42h
000Ah
000Ah
Typical timeout for maximum size buffer program =
Typical timeout per individual block erase = 2 n ms
2 n μ s
1024μs
1s
22h
44h
0012h
Typical timeout for full chip erase =
2 n ms
256Mb: 262s
0013h
0014h
0015h
512Mb: 524s
1Gb: 1048s
2Gb: 2097s
23h
46h
0001h
Maximum timeout for byte/word program =
2 n
times typical
1024μs
24h
48h
0002h
Maximum timeout for buffer program =
2 n
times typical
4096μs
25h
4Ah
0002h
Maximum timeout per individual block erase =
2 n
times typical
4s
26h
4Ch
0002h
Maximum timeout for chip erase = 2 n times typical
256Mb: 1048s
0002h
0002h
0002h
512Mb: 2096s
1Gb: 4194s
2Gb: 8388s
Note:
1. The values in this table are valid for both packages.
Table 20: Device Geometry Definition
Address
x16
27h
x8
4Eh
Data
0019h
Description
Device size = 2 n in number of bytes
Value
32MB
001Ah
001Bh
001Ch
64MB
128MB
256MB
28h
29h
50h
52h
0002h
0000h
Flash device interface code description
x8, x16
asynchronous
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
50
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2012 Micron Technology, Inc. All rights reserved.
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